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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos tm 5power-transistor,100v IPT015N10N5 datasheet rev.2.1 final powermanagement&multimarket
2 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet hsof 1description features ?idealforhighfrequencyswitchingandsync.rec. ?excellentgatechargex r ds(on) product(fom) ?verylowon-resistancer ds(on) ?n-channel,normallevel ?100%avalanchetested ?pb-freeplating;rohscompliant ?qualifiedaccordingtojedec 1) fortargetapplications ?halogen-freeaccordingtoiec61249-2-21 table1keyperformanceparameters parameter value unit v ds 100 v r ds(on),max 1.5 m w i d 300 a q oss 213 nc q g (0v..10v) 169 nc type/orderingcode package marking relatedlinks IPT015N10N5 pg-hsof-8-1 015n10n5 - 1) j-std20 and jesd22 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
3 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
4 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - 300 243 32 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =10v, t c =25c, r thja =40k/w 1) pulsed drain current 2) i d,pulse - - 1200 a t c =25c avalanche energy, single pulse 3) e as - - 652 mj i d =150a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - 375 w t c =25c operating and storage temperature t j , t stg -55 - 175 c iec climatic category; din iec 68-1: 55/175/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - 0.2 0.4 k/w - device on pcb, minimal footprint r thja - - 62 k/w - device on pcb, 6 cm2 cooling area 1) r thja - - 40 k/w - 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) see figure 3 for more detailed information 3) see figure 13 for more detailed information t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
5 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 100 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.2 3.0 3.8 v v ds = v gs , i d =280a zero gate voltage drain current i dss - - 0.1 10 5 100 a v ds =100v, v gs =0v, t j =25c v ds =100v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.3 1.6 1.5 2.0 m w v gs =10v, i d =150a v gs =6v, i d =75a gate resistance 1) r g - 1.4 2.1 w - transconductance g fs 140 280 - s | v ds |>2| i d | r ds(on)max , i d =100a table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 12000 16000 pf v gs =0v, v ds =50v, f =1mhz output capacitance c oss - 1800 2300 pf v gs =0v, v ds =50v, f =1mhz reverse transfer capacitance c rss - 80 140 pf v gs =0v, v ds =50v, f =1mhz turn-on delay time t d(on) - 36 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.8 w rise time t r - 30 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.8 w turn-off delay time t d(off) - 85 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.8 w fall time t f - 30 - ns v dd =50v, v gs =10v, i d =100a, r g,ext =1.8 w 1) defined by design. not subject to production test. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
6 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 53 - nc v dd =50v, i d =100a, v gs =0to10v gate charge at threshold q g(th) - 36 - nc v dd =50v, i d =100a, v gs =0to10v gate to drain charge 2) q gd - 34 51 nc v dd =50v, i d =100a, v gs =0to10v switching charge q sw - 51 - nc v dd =50v, i d =100a, v gs =0to10v gate charge total 2) q g - 169 211 nc v dd =50v, i d =100a, v gs =0to10v gate plateau voltage v plateau - 4.4 - v v dd =50v, i d =100a, v gs =0to10v gate charge total, sync. fet q g(sync) - 146 - nc v ds =0.1v, v gs =0to10v output charge 2) q oss - 213 284 nc v dd =50v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 300 a t c =25c diode pulse current i s,pulse - - 1200 a t c =25c diode forward voltage v sd - 0.9 1.2 v v gs =0v, i f =100a, t j =25c reverse recovery time 2) t rr - 103 206 ns v r =50v, i f =100a,d i f /d t =100a/s reverse recovery charge 2) q rr - 316 632 nc v r =50v, i f =100a,d i f /d t =100a/s 1) see 2 gate charge waveforms 2 for parameter definition 2) defined by design. not subject to production test. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
7 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 25 50 75 100 125 150 175 200 0 50 100 150 200 250 300 350 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 10 4 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
8 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 700 800 7 v 10 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 1 2 3 4 5 6 7 0 100 200 300 400 500 600 700 175 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 40 80 120 160 0 40 80 120 160 200 240 280 320 360 g fs =f( i d ); t j =25c t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
9 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 max typ r ds(on) =f( t j ); i d =150a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0 1 2 3 4 2800 a 280 a v gs(th) =f( t j ); v gs = v ds diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 80 100 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 2.5 10 0 10 1 10 2 10 3 10 4 25 c 175 c 175c max 25c max i f =f( v sd );parameter: t j t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8
10 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 80 v 50 v 20 v v gs =f( q gate ); i d =100apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 94 96 98 100 102 104 106 108 110 v br(dss) =f( t j ); i d =1ma t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms
11 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet 6packageoutlines figure1outlinepg-hsof-8-1 t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2
12 optimos tm 5power-transistor ,100v IPT015N10N5 rev.2.1,2015-02-23 final data sheet revisionhistory IPT015N10N5 revision:2015-02-23,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2014-12-17 release of final version 2.1 2015-02-23 correction of soa area with ipulse = 1200a welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. t ab 1 2 3 4 5 8 6 7 d r a i n t a b g a t e p i n 1 s o u r c e p i n 2 - 8 gate charge waveforms z8b00169619 revision issue date european projection 02 20-02-2014 document no. e5 e4 k1 e millimeters a dim min max inches min max b1 c d d2 e e1 n l 2.20 2.40 0.087 0.094 9.70 0.40 10.28 9.70 1.60 9.90 0.60 10.58 10.10 2.10 0.382 0.016 0.405 0.382 0.063 0.390 0.024 0.416 0.398 0.083 8 8 1.20 (bsc) 0.047 (bsc) b 0.70 0.90 0.028 0.035 1) partially covered with mold flash b2 0.42 0.50 0.017 0.020 h h1 11.48 11.88 0.452 0.468 h2 7.15 0.281 h3 3.59 0.141 h4 3.26 0.128 l1 0.70 0.028 3.30 0.130 7.50 0.295 8.50 0.335 9.46 0.372 6.55 6.75 0.258 0.266 4.18 0.165 l4 1.00 1.30 0.039 0.051 l2 0.60 0.024 2 scale 0 4mm 0 2

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